CN
TALENT CONCEPT
We will continue to optimize the human resources work system and build a team of talents with integrity and ability, loyalty, dedication, pragmatism, innovation, honesty and responsibility, and outstanding performance.
To construct and perfect the all-round development environment of talents with "both political integrity and ability, equal attention to both internal and external, full use of talents and talents".
We should create an education and employment mechanism that provides "platforms for work, opportunities for innovation, space for development and rewards for contribution".
Firmly establish the concept of human resources as the first resource, uphold the purpose of "respect talent value, shaping talent quality, committed to talent growth", people-oriented, caring for employees, to achieve the common development of the company and employees.
COMPENSATION AND BENEFITS
We provide a competitive compensation and welfare system in the industry. We have a scientific and fair evaluation mechanism inside the company. Through value creation, value evaluation and value distribution, we enable employees to get timely and reasonable rewards. At the same time, we conduct an annual review of the remuneration scheme to ensure that it is balanced in terms of competition and cost.
Annual salary increase opportunity
Generous annual bonus/project award
Paid annual leave
The annual travel
Subsidies for local talents
Communication allowance
Housing subsidies
Holiday allowance
Annual physical examination
All kinds of condolence money
TALENT RECRUITMENT
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Senior Model Engineer
RELEASE TIME：2022/03/25 丨 NUMBER OF RECRUITERS: 2 丨 PLACE OF WORK：Kunshan, Suzhou city, Jiangsu Province
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JOB RESPONSIBILITIES：
1. Responsible for the development and maintenance of rf microwave GaN HEMT model;
2. Responsible for researching new modeling technology and device characterization technology;
3. Responsible for writing technical documents related to the model;
QUALIFICATION：
1. Master degree or above, at least 3 years experience in III-V semiconductor modeling, experience in rf microwave gallium nitride (GaN) modeling is preferred;
2. Able to operate measuring equipment (semiconductor parameter tester, vector network analysis, Loadpull system) and familiar with testing principles;
3.Familiar with semiconductor device physics and semiconductor process;
4. Familiar with Test Key making methods (modeling graphics and de-embeding Structure);
5. Programming ability is a plus;
Contact HR：
Contact Number：0512-36886888 TO 8220
Email：pei.xu@itrisemi.com
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Layout engineer
RELEASE TIME：2022/03/25 丨 NUMBER OF RECRUITERS: 2 丨 PLACE OF WORK：Kunshan, Suzhou city, Jiangsu Province
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JOB RESPONSIBILITIES：
1. Responsible for the development and maintenance of rf microwave GaN HEMT model;
2. Responsible for researching new modeling technology and device characterization technology;
3. Responsible for writing technical documents related to the model;
QUALIFICATION：
1. Master degree or above, at least 3 years experience in III-V semiconductor modeling, experience in rf microwave gallium nitride (GaN) modeling is preferred;
2. Able to operate measuring equipment (semiconductor parameter tester, vector network analysis, Loadpull system) and familiar with testing principles;
3.Familiar with semiconductor device physics and semiconductor process;
4. Familiar with Test Key making methods (modeling graphics and de-embeding Structure);
5. Programming ability is a plus;
Contact HR：
Contact Number：0512-36886888 TO 8220
Email：pei.xu@itrisemi.com
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PDK engineer
RELEASE TIME：2022/03/25 丨 NUMBER OF RECRUITERS: 2 丨 PLACE OF WORK：Kunshan, Suzhou city, Jiangsu Province
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JOB RESPONSIBILITIES：
1. Responsible for the development and maintenance of rf microwave GaN HEMT model;
2. Responsible for researching new modeling technology and device characterization technology;
3. Responsible for writing technical documents related to the model;
QUALIFICATION：
1. Master degree or above, at least 3 years experience in III-V semiconductor modeling, experience in rf microwave gallium nitride (GaN) modeling is preferred;
2. Able to operate measuring equipment (semiconductor parameter tester, vector network analysis, Loadpull system) and familiar with testing principles;
3.Familiar with semiconductor device physics and semiconductor process;
4. Familiar with Test Key making methods (modeling graphics and de-embeding Structure);
5. Programming ability is a plus;
Contact HR：
Contact Number：0512-36886888 TO 8220
Email：pei.xu@itrisemi.com
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TCAD Engineer
RELEASE TIME：2022/03/25 丨 NUMBER OF RECRUITERS: 2 丨 PLACE OF WORK：Kunshan, Suzhou city, Jiangsu Province
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JOB RESPONSIBILITIES：
1. Responsible for the development and maintenance of rf microwave GaN HEMT model;
2. Responsible for researching new modeling technology and device characterization technology;
3. Responsible for writing technical documents related to the model;
QUALIFICATION：
1. Master degree or above, at least 3 years experience in III-V semiconductor modeling, experience in rf microwave gallium nitride (GaN) modeling is preferred;
2. Able to operate measuring equipment (semiconductor parameter tester, vector network analysis, Loadpull system) and familiar with testing principles;
3.Familiar with semiconductor device physics and semiconductor process;
4. Familiar with Test Key making methods (modeling graphics and de-embeding Structure);
5. Programming ability is a plus;
Contact HR：
Contact Number：0512-36886888 TO 8220
Email：pei.xu@itrisemi.com
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