Wireless information transmission

In the DC~18GHz operating frequency band, the SiC-based GaN HEMT technology of (ITRISEMI) supports various power amplification application requirements of 28V, 48V operating voltage, broadband or narrowband, continuous wave or pulse modulation signal. Diverse application forms such as discrete bare chips, packaged transistors, MCMs and MMICs are supported. The application field involves various scenarios such as radio communication, broadcasting, detection and positioning.

RF energy

The improved GaN HEMT process for industrial-grade RF heating applications features high gain, high efficiency, and good robustness, making them ideal to replace industrial-grade magnetrons and have longer working life and lower maintenance costs.

Power electronics

The high power density GaN HEMT technology of (ITRISEMI) is expected to support the reduction of the volume and weight of the power system to 1/4 of the existing, and the power consumption to be reduced to 1/4 of the existing, and cheaper than Si-based solutions . It can be widely used in power electronics-based industries such as consumer electronics fast charging, data centers, renewable energy, industrial motors/robots/LED lighting, and electric vehicles.